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   ICON GaAS crystal
 
 
 
 

III/V semiconductor

Application in infrared light-emitting diodes, laser diodes, solar cells and optical windows.

 
Description  
 

GaAs (Gallium arsenide) is a compound of the elements gallium and arsenic. It is a III/V semiconductor, and is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits,infrared light-emitting diodes, laser diodes, solar cells and optical windows.


 

Major capability parameter

single crystal

Doped

conduction type

concentration of flows cm-3

Density

cm-2

Growth method

Max size

Substrate

GaAs

None

Si

/

<5×105

LEC

HB

Dia3″

Dia3″×0.5

Dia2″×0.5

Si

N

>5×1017

Cr

Si

/

Fe

N

~2×1018

Zn

P

>5×1017

Size(mm)

25×25×0.5mm、10×10×0.5mm、10×5×0.5mm、5×5×0.5mm

Special size and orientation are available upon request

Surface rough

Surface roughness(Ra):<=5A

Polishing

Single or double

Pack

100 clean bag,1000 exactly clean bag

 
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