GAGG:Ce Scintillator, GAGG Crystal, GAGG Scintillation Crystal
Advantage
● Good stopping power
● High brightness
● Low afterglow
● Fast decay time
Application
● Gamma camera
● PET, PEM, SPECT, CT
● X-ray & Gamma ray detection
● High energy container inspection
Properties
| Type |
GAGG-HL |
GAGG Balance |
GAGG-FD |
| Crystal System |
Cubic |
Cubic |
Cubic |
| Density（g/cm3） |
6.6 |
6.6 |
6.6 |
| Light Yield (photons/kev) |
60 |
50 |
30 |
| Decay Time(ns) |
≤150 |
≤90 |
≤48 |
| Center Wavelength（nm） |
530 |
530 |
530 |
| Melting Point (℃) |
2105℃ |
2105℃ |
2105℃ |
| Atomic Coefficient |
54 |
54 |
54 |
| Energy Resolution |
＜5% |
＜6% |
＜7% |
| Self-Radiation |
No |
No |
No |
| Hygroscopic |
No |
No |
No |
Product Description
GAGG:Ce (Gd3Al2Ga3O12) gadolinium aluminum gallium garnet doped with cerium. It is a new scintillator for single photon emission computed tomography (SPECT), gamma-ray and Compton electron detection. Cerium doped GAGG:Ce have many properties that make it suitable for gamma spectroscopy and medical imaging applications. A high photon yield and emission peak around 530 nm makes the material well suited to be readout by Silicon Photo-multiplier detectors. Epic crystal developed 3 kinds of GAGG:Ce crystal, with faster decay time(GAGG-FD) crystal, typical(GAGG-Balance) crystal, higher light output(GAGG-HL) crystal, for the customer in different field. GAGG:Ce is a very promising scintillator in high energy industrial field, when it was characterized on life test under 115kv, 3mA and the radiation source located at a 150 mm distance from crystal, after 20 hours the performance is nearly the same as the fresh one. It means it has a good prospect to withstand high dose under X-ray irradiation, of course it depends on irradiation conditions and in case of going further with GAGG for NDT further exact test need to be conducted. Beside the single GAGG:Ce crystal, we are able to fabricate it into linear and 2 dimensional array, the pixel size and separator could be achieved based on requirement. We also have developed the technology for the ceramic GAGG:Ce, it has better coincidence resolving time(CRT), faster decay time and higher light output.
Energy resolution: GAGG Dia2”x2”, 8.2% Cs137 @662Kev
Afterglow performance
Light output performance
Timing Resolution: Gagg Fast Decay Time
(a) Timing resolution: CRT=193ps (FWHM, energy window: [440keV 550keV])
(a) Timing resolution Vs. bias voltage: (energy window: [440keV 550keV])
Please note that the peak emission of GAGG is 520nm while the SiPM sensors are designed for crystals with 420nm peak emission. The PDE for 520nm is 30% lower compared with the PDE for 420nm. The CRT of GAGG could be improved from 193ps (FWHM) to 161.5ps (FWHM) if the PDE of the SiPM sensors for 520nm would matched with the PDE for 420nm.
